Abstract

The metalorganic chemical vapor deposition (MOCVD) growth of CdTe films on 3 inch diameter (100) GaAs substrates using a vertical rotating-susceptor reactor with linearly alligned multi-nozzles was studied. Specular single ( 1 1 1 )B CdTe films over the entire 3 inch wafer were obtained by adjusting the VI/II ratio individually for each nozzle. The thickness variation for a 2.5 μm thick CdTe films was below 8%. The full-width at half-maximum (FWHM) of the (333) double-crystal X-ray rocking curve (DCRC) was about 250 arc sec. To evaluate its suitability as a substrate for HgCdTe epilayers, a Hg 0.7Cd 0.3Te layer 3 μm thick was grown on the CdTe/GaAs using the same MOCVD system. The HgCdTe layer also showed a specular surface. No macroscopic crystal defects such as cellular structures or antiphase domains were observed on the etched HgCdTe surface.

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