Abstract

The temperature dependence of resistivity (TDR) has been studied in PF 6− doped poly(3-methylthiophene) (PMeT(PF 6−) and AsF 6− doped polypyrrole (PPy(AsF 6−)). For several samples of PMeT(PF 6−) metallic TDR was observed below 8K similar to that in PPy(PF 6−). For PPyCAsF 6−), application of a pressure of 13.5 Kbar induced the metallic TDR below 9K, despite of the semiconducting TDR at ambient pressure throughout the whole temperatures. We have also observed a clear transition from semiconducting to metallic TDR in PMeT(PF 6−) with increasing pressure. From our observations, it is indicated that the metallic TDR is not an exceptional phenomenon only in the PPy(PF 6−).

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