Metal-insulator-semiconductor structure with a polymerized Langmuir-Blodgett film of a styrene functionalized surfactant

Abstract

Metal-insulator-semiconductor structures were studied using polymerized films of di- n-octadecylmethyl( p-vinyl) benzylammonium chloride (DOVAC) as the insulator. DOVAC layers were deposited onto a p-type silicon wafer by means of the Langmuir-Blodgett technique and polymerized by UV radiation. High frequency capacitance-voltage ( C-V) measurements showed accumulation, depletion and inversion regions. The dielectric thickness d/ε r of a polymerized DOVAC monolayer was measured to be 0.6 nm. The effective fixed charge density at the insulator-silicon interface was of the order of 10 11 electronic charges cm −2. An abnormal hysteresis, probably caused by charge trapping at the silicon-insulator interface, was observed in the C-V curves. A field effect transistor based on a polymerized DOVAC film was fabricated.