Abstract
The electrical and dielectric properties of metal-insulator-semiconductor (MIS) and metal-insulator-metal (MIM) structures of various insulator LB films were investigated. High frequency capacitance-voltage (C-V) measurements of the MIS structure of the LB films showed the accumulation, depletion and inversion regions. The dielectric constants of the new insulator LB films were calculated. In constrast with other LB films, the microgel star-shaped amphiphile (MAS) LB film showed a potential application in electronic devices due to its higher thermal and mechanical stabilities. The breakdown voltage of the MIM structure of the MAS containing only a single monolayer is over 200 V. Results of the variable capacitance made from the new type insulator LB films were also reported.
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