Abstract
Metal wires down to 25 nm width were fabricated using a simple imprint technology yet showing high resolution. The patterns were transfered with high geometric control from the silicon mold into a 100 nm thick PMMA layer by pressing the mold into the resist at a temperature of 140^oC for 20 min. Then the PMMA layer was thinned by Argon plasma etching and 10 nm thick Gold wires were defined by evaporation and lift-off. Similarly, by imprint in a three layer resist structure with an intermediate metal layer used as an etch stop 25 nm wide wires could be defined with larger process latitude.
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