Abstract
A series of manganite-based superlattices composed of half-metallic La ⅔ Sr ⅓ MnO₃ and insulating LaMnO₃ stacking layers were fabricated by employing pulsed laser deposition method. The dc resistivity increased drastically by simply reducing the stacking periodicity. The resistivity enhancement was accompanied by a gradual decrease in the temperature (T c ) of the Metal-to-Insulator Transition (MIT). This observation was interpreted as a small decrease in the effective metallic fraction near the percolation threshold. For the stacking periodicity less than a certain critical value, there appeared another transition to an insulating state at temperatures far below T c . This low-temperature transition seems to be closely related to the AF-type (C-type) orbital ordering in newly formed insulating domains.
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