Tuning the metal-insulator transition in NdNiO3 thin films

Abstract

The RNiO3 (R is rare earth) perovskites are famous for their metal to insulator transition (MIT). The temperature can be transformed and depends on the nature of the rare earth. The MIT in thin films and heterostructures of RNiO3 propose the chance to control the MIT as a function of thickness via strain using different substrates. We have reported the electrical transport properties of NdNiO3/NdGaO3, and NNO/NGO/STO structures. These structures were fabricated by pulsed laser deposition (PLD) method. The temperature of the MIT changes from 155K to 195 K. The electrical resistivity of the heterostructures undergoes MIT, depending on the thickness and deposition conditions. Thickness and deposition temperature were found to have a great impact on the electrical transport properties. The shift in TMI changes with thickness and it larger for thinner NdNiO3. The MIT of NNO thin films is responsive to strain and its partial relaxation creates an inhomogeneous strain field that broadens the MIT. This study may be potentially applicable to Mott transistor devices.