Abstract
Thin-film transistors (TFTs) with metal-replaced junctions (MERJs) have been fabricated and characterized. The junction parasitic resistance of a MERJ TFT is significantly reduced by partially replacing the semiconductor source and drain with a metal. The replacement process was executed at a low temperature of 400/spl deg/C with minimum added process complexity. Compared to a TFT with regular semiconductor source and drain junctions, a MERJ TFT was found to exhibit higher effective values of field-effect mobility and ON-state current.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
