Abstract
Cu2ZnSnS4 (CZTS) has been widely used as absorber layer for an alternative cadmium free thin film solar cell material. However, in some of the CZTS based solar cell still use cadmium sulphide or cadmium selenide as buffer layer. Because of its toxic nature, it can have very harmful effect on environment. In this work, we have simulated a CZTS-Metal oxide-based hybrid solar cell systems towards cd-free solar cells. We have taken CZTS as absorber material as p-type semiconductor and for n-type semiconductor we have used various metal oxides as Titanium oxide (TiO2), Molybdenum oxide (MoO3), and Tungsten oxide (WO3). The overall efficiency of each of the device reaches a maximum of around 20%. The stability of the cell is simulated by recording various IV parameters with changing temperature. The IV parameters with thickness have been optimized. The various other parameters with varying different doping density have been analyzed. The C–V and C-f characteristics of each solar cell design have been analyzed. The quantum efficiency of all the simulated device gives excellent absorbing efficiency within visible range.
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