Abstract

Wide band gap metal oxides are ideally suited for inorganic optoelectronic devices. While zinc oxide is a commonly used n-type material, there is still a lot of ongoing work for finding suitable p-type oxides. In this work, we describe a two-step route to formulate a stable and conducting p-type nickel oxide (NiO) nanofluid. NiO nanoparticles were synthesised using a bottom-up wet chemical approach and dispersed in ethylene glycol to form a nanofluid. The viscosity and surface tension of the nanofluid were optimised for printing. The printing was done using an extrusion-based direct writer. The NiO nanofluid was printed onto an aluminum-doped zinc oxide layer and annealed at different temperatures. Electrical characterisation of the junction was used to extract the junction barrier for carriers across the interface. The resulting heterojunction was found to exhibit rectifying behaviour, with the highest rectification ratio occurring at an annealing temperature of 250 °C. This annealing temperature also resulted in the lowest junction barrier height, and was in excellent agreement with theoretically predicted values. The development of a printed p-type ink will help in the realisation of oxide-based printed electronic devices.

Highlights

  • Advances in the development of transparent n-type materials such as zinc oxide (ZnO), tin oxide (SnO2), and indium oxide (In2O3) have led to strides being taken towards the realisation of all-oxide large scale microelectronic devices through wet chemical techniques.[1]

  • nickel oxide (NiO) nanoparticles were synthesised by the thermal decomposition of nickel hydroxide (Ni(OH)2) through a modi cation of the technique reported by El-Kemary et al.[42]

  • The chemical synthesis route adapted here involves the preparation of nickel hydroxide, which is converted into NiO by annealing at low temperature (400 C for 2 h)

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Summary

Introduction

Advances in the development of transparent n-type materials such as zinc oxide (ZnO), tin oxide (SnO2), and indium oxide (In2O3) have led to strides being taken towards the realisation of all-oxide large scale microelectronic devices through wet chemical techniques.[1] a lack of availability of highperformance p-type materials has served as a constraint for certain applications, leading to the use of either unipolar devices or choosing a combination of inorganic–organic hybrid devices.[2,3] The realisation of p-type materials with properties such as hole mobilities and transparencies similar to their ntype counterparts, and that are easy to process would lead to the development of transparent devices and displays, with the potential to impact several facets of daily life.[3]. The main difficulty in achieving similar performance in ptype materials arises from the difference in mechanism of the formation and conduction of holes. In n-type metal oxides, oxygen vacancies produce electrons for conduction.[4] in p-type oxides, hole creation is limited by the formation energy of point defects that act as hole producers (such as oxygen interstitials and metal vacancies), the ionization energy

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