Abstract
GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications.
Highlights
III-Nitride semiconductor nanowires (NWs) have recently attracted great interest due to their potential applications including light-emitting diodes (LEDs), lasers, photodetectors, gas sensors and solar cells [1,2,3,4,5]
The growth is performed in a close-coupled showerhead Metal organic vapour-phase epitaxy (MOVPE) reactor
The EL spectra exhibit a violet emission centred at 420 nm and no defect band. These results demonstrate the possibility to make a wire-based LED device on silicon by MOVPE
Summary
III-Nitride semiconductor nanowires (NWs) have recently attracted great interest due to their potential applications including light-emitting diodes (LEDs), lasers, photodetectors, gas sensors and solar cells [1,2,3,4,5]. The direct growth of NWs on conductive substrates benefits from a direct electrical backside contact that can considerably simplify the device processing. In this context, silicon wafers present several attractive advantages to be employed as n- or p-type conductive substrates such as scalability (up to 12 in.), good thermal conductivity and low cost. The planar growth of GaN on Si substrates is challenging because of the large lattice and thermal dilatation mismatches that create high dislocation densities and residual strains. The growth of GaN NWs on Si (111) has been mainly developed by catalyst-free molecular beam epitaxy (MBE) using an intermediate interfacial AlN layer to improve the
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