Abstract
Metal-organic vapor-phase epitaxial (MOVPE) growth of InGaN and InAlN has been studied to prepare a wanted band-gap from 0.65 to 2.5 eV for multi-junction tandem solar cells. The main subjects in the growth of InGaN are the suppression of phase separation and metallic In incorporation and the control of composition in grown films. Both phase separation and metallic In segregation can be avoided by choosing the appropriate substrate position on the susceptor. By optimizing growth temperature and TMI/(TMI + TEG) molar ratio, InGaN films with full composition range are successfully grown. The Mg-doping behavior of MOVPE InGaN (In composition 0.1–0.4) is also studied using Cp2Mg as a Mg source. The growth behavior of InAlN is studied with the dominant parameters such as growth pressure, TMI/(TMI + TMA) molar ratio and substrate position on the susceptor. The major difficulty in the InAlN growth is found to be the adduct formation by the parasitic reaction of TMA and NH3. By employing the atmospheric-pressure growth, adduct-free InAlN films are grown with a reasonable growth rate (~1 μm/h). This enables us to grow InAlN films with an In content from 0.3 to 1, corresponding to band-gaps from 3.6 to 0.65 eV. In order to demonstrate an ability to prepare these different alloys sequentially, InAlN/InGaN hetero-structures are prepared and the photo-response is observed for the first time for an n-InAlN/p-InGaN hetero-junction.
Highlights
Photovoltaic power generation is expected to be one of the key technologies for the realization of a low-carbon society
An n-InAlN/pInGaN hetero-structure is successfully prepared and its photo-response is confirmed for the first time
When Cp2Mg/(TMI ? TEG) molar ratio is 2–5 %, p-type conduction is achieved for InGaN films with In content of 0.25–0.4
Summary
Photovoltaic power generation is expected to be one of the key technologies for the realization of a low-carbon society. Since the band-gap of InN was found to be about 0.7 eV [2], InN-based nitride semiconductor alloys, such as InGaN and InAlN, have had much attention as materials for multi-junction solar cells [1, 3]. This is mainly because a wide range of band-gaps can be realized by changing only their composition; from 0.65 to 3.4 eV with InGaN and from 0.65 to 6.2 eV with InAlN. An n-InAlN/pInGaN hetero-structure is successfully prepared and its photo-response is confirmed for the first time
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