Abstract
ABSTRACT Thin films of barium-strontium-titanate (BST) can serve as the tunable dielectric in a variety of RF and microwave devices. Compositionally graded BST films optimize films for the highest permittivity, highest tunability, maximum temperature stability, and minimum dielectric loss. This paper describes recent work to deposit BST films using a dual injection, metal organic chemical vapor deposition (MOCVD) technique. Injecting two separate precursor solutions (one for Ba-Ti oxide and one for Sr-Ti oxide) provides easy adjustment of the Ba/Sr ratio in the film. The dual injection MOCVD technique can also be extended to a wide range of other complex oxide systems.
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