Abstract
We report on the metal organic chemical vapor deposition (MOCVD) growth of high density InAs/Sb:GaAs quantum dots (QDs) on Ge/Si substrate and its electroluminescence (EL) characteristics at room temperature (RT). High density (above 4 × 1010 cm−2 per layer) QDs with low coalescence emitting in the 1.3 µm band at RT with a full width and half maximum of ∼42 meV were obtained. RT EL at 1.24 µm was observed from a double heterostructure, containing eight-layer stacked InAs/Sb:GaAs QD active region. These results are promising for the realization of monolithically integrated QD laser for silicon photonics application.
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