Abstract

For developing coating materials, the fluorides of scandium, lanthanum, strontium, barium, magnesium and aluminum were produced from their oxides and chlorides by means of exposure to chlorine trifluoride gas at temperatures between room temperature and 700°C. The metal chlorides could be easily fluorinated even at room temperature, while the metal oxides required temperatures higher than 300?C. After the heating in ambient hydrogen at 1100°C, the fluorides of lanthanum and barium showed very low weight losses at 1100°C, although the weights of the other fluorides significantly decreased. These materials may work as protective films against corrosive and high temperature environments, particularly when using the chlorine trifluoride gas.

Highlights

  • Chemical vapor deposition (CVD) can produce various high quality and functional material films [1]

  • When the scandium oxide was exposed to the chlorine trifluoride gas at room temperature, the F/Sc value was still near 1

  • In order to develop materials for protecting surfaces from high temperature and corrosive gas environments, such as chlorine trifluoride gas, metal fluorides having high melting points were synthesized from metal oxides and chlorides using chlorine trifluoride gas

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Summary

Introduction

Chemical vapor deposition (CVD) can produce various high quality and functional material films [1]. The unnecessary films formed near the substrate often emit many small particles that cause serious film defects, such as hillocks and stacking faults. Such films are removed by means of a cleaning process using highly reactive gases, such as hydrogen chloride, chlorine trifluoride, fluorocarbons and nitrogen fluoride along with thermal and/or plasma assistance. For the silicon carbide CVD reactor, the cleaning process has been very difficult except when using chlorine trifluoride gas [3]-[14], because of the significantly stable chemical nature of silicon carbide [2]

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