Abstract

In recent years, ultrathin Ag films (UTAFs), which are attractive owing to its extremely low resistance, relatively high transparency, excellent mechanical flexibility and mature mass production, have been reported as potential candidates to replace traditional indium tin oxide (ITO). To achieve a high-quality UTAF, a nucleation-inducing seed layer (NISL) is required to address the issue of irregular Ag islands growth. However, the structures of films so deposited are still far from being ideal and consist of rough surfaces with high densities of voids and grain boundaries when the film thickness is less than ~6 nm. Here, a hybrid structure composed of a gold (Au)/polyethyleneimine (PEI) bilayer is employed as a high-density NISL for the fabrication of an UTAF. Compared to the conventional single-layered PEI NISL that physisorbed on the substrate via the weak electrostatic attraction between the negatively charged substrate and the positively charged amine groups in PEI, our novel bilayered Au/PEI NISL exhibits a much higher density of nucleation sites due to the formation of strong coordinate covalent bonds between the Au atoms and amine groups. As a result, the percolation threshold thickness of the UTAF based on the Au/PEI bilayer can be reduced to as low as 3 nm. After capping with a high-refractive-index tantalum pentoxide (Ta2O5) anti-reflection layer, the resultant Au/PEI/8 nm Ag/30 nm Ta2O5 (APAT) electrode exhibits an excellent optoelectrical performance with a sheet resistance of 9.07 Ω/sq and transmittance of 92.9% in the spectral range of 400-800 nm as well as outstanding long-term environmental and mechanical stabilities. The findings demonstrate a novel strategy for the development of high-performance UTAF-based transparent electrodes.

Highlights

  • The rapid growth of optoelectronic devices including flexible displays, touchscreens, electrochromics, light-emitting diodes, and photovoltaic cells requires the development of flexible transparent conductive electrodes (FTCEs) possessing high optical transparency, low sheet resistance, good mechanical flexibility, and superior environmental stability (Hecht et al, 2011; Morales-Masis et al, 2017)

  • FTCEs based on ultrathin metal films (UTMFs) with thickness below 10 nm have generated great interest owing to their high electrical conductivity, good mechanical stability, low surface roughness, and mature fabrication technology (Hatton et al, 2003; Illhwan and Jong-Lam, 2015; Maniyara et al, 2016)

  • A high-performance ultrathin Ag film (UTAF) with a percolation threshold thickness of as low as 3 nm is successfully demonstrated by incorporating an Au/PEI bilayered structure as a novel nucleation-inducing seed layer (NISL) with a high density of nucleation sites for the incoming deposited Ag atoms

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Summary

Introduction

The rapid growth of optoelectronic devices including flexible displays, touchscreens, electrochromics, light-emitting diodes, and photovoltaic cells requires the development of flexible transparent conductive electrodes (FTCEs) possessing high optical transparency, low sheet resistance, good mechanical flexibility, and superior environmental stability (Hecht et al, 2011; Morales-Masis et al, 2017). The metal film with such a low film thickness deposited on a foreign substrate tends to disorderly migrate and aggregate as irregular islands (Volmer-Weber growth mode) due to the surface energy mismatch with the substrate, and exhibits a discrete granular morphology with a high electrical resistivity as well as an additional light absorption and scattering loss, which severely affect both the Rsheet and T of the resulting TCE (Zhang et al, 2014) To address this morphological deficiency, an ultrathin nucleation-inducing seed layer (NISL) composed of high-surface energy metals, transition metal oxides, organics with thiol and amine functional groups, or a hybrid thereof is usually placed underneath the evaporated metal film to suppress the growth of isolated islands and promote the formation of a highly continuous UTMF

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