Abstract
Metal drift into a low dielectric constant (low κ) hybrid organosiloxane (OS) polymer has been investigated using metal/OS/SiO2/Si capacitors. Compared to Cu, Al gate metal capacitors showed larger flatband voltage shifts in the capacitance–voltage (C–V) curves upon bias temperature stressing (BTS). To elucidate the mechanism and source of this bias instability, further BTS experiments were performed with gate metals tantalum and platinum. It is suggested that all these metals, except Pt, drift into the dielectric and the extent of drift appears to be directly related to the metal’s tendency to oxidize. The calculations, assuming singly ionized metal species, show that the charges/cm2 entering the dielectric fall in the order Pt<Cu<Ta<Al. A mechanism is proposed linking the presence of oxygen in OS to the ionization of the metals, and consequent drift through the dielectric under applied electric fields.
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