Abstract
Fluorocarbon films have been prepared by plasma polymerization of CF4 using an RF planar magnetron with an aluminium target. More than one order of magnitude higher deposition rate has been achieved in comparison with an r.f. diode system operated under similar conditions of monomer pressure and flow rate and power input. A glow discharge in a CF4[25%]-argon [75%] mixture was used to incorporate aluminium from a target electrode into the polymer films. The foregoing mixture and another based on CF4 [87%]-argon [13%] were used in the RF discharge with a copper target. Some experiments with a gold target and pure CF4 as the inlet gas were also made. The film structure was examined by SEM and TEM and characteristic micrographs are presented here. The composition of the films was estimated from an AES study. The sheet resistivity of the metal/polymer film complexes was determined.
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