Abstract
A novel-gated structure of aluminum (Al)—perovskite (CH3NH3PbI3)—indium tin oxide (ITO), with Al as source and ITO as drain terminals, has been reported. Ambipolar nature of CH3NH3PbI3 has been explored for the device channel. Two Schottky junctions are present at source–channel and channel–drain junctions with barriers of 0.4 and 0.6 eV, respectively. Both, n- and p-type FET-like characteristics have been observed, when the device was biased, accordingly. The triangular tunneling has been observed in the output and transfer characteristics. The device shows a higher current on-off ratio ( ${I}_{ \mathrm{\scriptscriptstyle ON}}/_{ \mathrm{\scriptscriptstyle OFF}})$ of 106 with a steeper and improved sub-threshold swing (SS) of 20 ± 2 mV/decade for P tunnel field-effect transistor (TFET). However, for N TFET, ${I}_{ \mathrm{\scriptscriptstyle ON}}/_{ \mathrm{\scriptscriptstyle OFF}}$ of 104 with SS of 30 ± 2 mV/decade has been obtained.
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