Abstract
We study the metal-catalyst-free growth of uniform and continuous graphene on different insulating substrates by microwave plasma-enhanced chemical vapor deposition (PECVD) with a gas mixture of C2H2, NH3, and H2 at a temperature of 700–750 °C.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
