Abstract
Nanocrystalline diamond (NCD) films were produced by microwave plasma-enhanced chemical vapor deposition (MPECVD) using gas mixtures of Ar, H2, and CH4. The structural properties, electron emission, and electric discharge behaviors of the NCD films varied with H2 flow rates during MPECVD. The turn-on field for electron emission at a pressure of 2.66 × 10−4 Pa increased from 4.2 V μm−1 for the NCD films that were deposited using a H2 flow rate of 10 cm3 min−1 to 7 V μm−1 for films deposited at a H2 flow rate of 20 cm3 min−1. The NCD film with a low turn-on field also induced low breakdown voltages in N2. The grain size and roughness of the NCD films may influence both the electron emission and the electric discharge behaviors of the NCD cathodes.
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