Abstract
Results of the scaling theory of localisation are discussed with respect to transport near the mobility edge in amorphous semiconductors. It is shown how the statistical properties of the conductance strongly influence the activated temperature dependence of the conductivity. The range of validity of the approach is estimated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
