Abstract
Multi-layer graphene has many unique properties for realizing graphene-based nano-electronic device applications as well as for fundamental studies. This paper mainly focuses on the conductance fluctuations in multi-layer graphene. The low-temperature saturation of dephasing time in multi-layer graphene is one order magnitude shorter than that in single-layer graphene, and the onset temperature of the low-temperature saturation of dephasing time in multi-layer graphene was significantly lower than that in single-layer graphene, which is noteworthy in the low-temperature saturation of dephasing time. We speculate that the carrier transport is shielded by capping transport and bottom layer graphene due to the substrate impurities and air molecules scattering.
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