Abstract
In this work, we report on a novel simple yet robust two-mask metal-on-insulator (MOI) process and illustrate its implementation for the fabrication of a meso scale MEMS inertial switch. The devices were fabricated of a ∼40 µm thick layer of nickel electrodeposited on top of a 4 µm thick thermal field oxide (TOX) covering a single crystal silicon wafer. A 40 µm thick layer of KMPR® resist was used as a mold and allowed the formation of high-aspect-ratio (1:5) metal structures. The devices were released by the sacrificial etching of the TOX layer in hydrofluoric acid. The fabricated devices were mounted in a ceramic enclosure and were characterized using both an electromagnet shaker and a drop tester. The functionality of the switch, aimed to trigger an electrical circuit when subjected to an acceleration pulse with amplitude of 300 g and duration of 200 µs, was demonstrated experimentally and the performance targets were achieved. The experimental results were consistent with the model predictions obtained through finite element simulations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.