Abstract
AbstractA reaction engineering model has been developed to describe the mercury‐sensitized photochemical vapor deposition of hydrogenated amorphous silicon (a‐Si:H) semiconductor thin films. Model equations governing the gas‐phase generation, transport, and surface reactions of SiH3 and H film precursor radicals are solved to predict film growth rate and bonded hydrogen content. Behavior of the model has been studied as a function of deposition conditions (pressure, temperature, feed composition, and flow rates) and has been verified by comparison with experimental results.
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