Abstract

This paper analyses the possibility of MEMS electrostatic influence machines using electromechanical switches like the historical predecessors did two centuries ago. We find that a generator design relying entirely on standard silicon-on-insulator(SOI) micromachining is conceivable and analyze its performance by simulations. The concept appears preferable over comparable diode circuits due to its higher maximum energy, faster charging and low precharging voltage. A full electromechanical lumped-model including parasitic capacitances of the switches is built to capture the dynamic of the generator. Simulation results show that the output voltage can be exponentially bootstrapped from a very low precharging voltage so that otherwise inadequately small voltage differences or charge imbalances can be made useful.

Highlights

  • A vibration energy harvester typically consists of a spring-mass system and an electromechanical transducer

  • While using an external bias delegates the problem of charge or energy retention to other parts of the system such as the power electronics, or is used solely for test purposes, an internal bias provides a more complete and self-sufficient integration that contains the solution to the problem on chip

  • The doubler circuit with the electromechanical switches is shown in the bottom of figure 2

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Summary

Introduction

A vibration energy harvester typically consists of a spring-mass system and an electromechanical transducer. The harvester is biased by external sources in the form of a provided voltage or charge, or by internal sources such as work function differences between electrode materials [5], precharged floating electrodes [6] or electrets [7]. Several designs for small scale generators have shown doublers of electricity with one single capacitor or two anti-phase capacitors [12, 13, 14]. Their circuits rely on diodes that result in reduced charging current and a large required minimum precharge voltage. A small, electrically isolated island on the proof mass is etched through the device layer for the switches S2/S3.

Lumped-model
Simulation results
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