Abstract
In this paper, we report a fabrication method for the formation of microelectromechanical systems (MEMS) structures with perfectly protected edges and corners in {110}Si wafers using complementary metal oxide semiconductor (CMOS) compatible tetramethyl-ammonium hydroxide (TMAH) solution. Fabrication method includes two-steps wet etching. The second step of etching is carried out after mask inversion from silicon nitride (Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ) to silicon dioxide (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) by local oxidation of silicon (LOCOS) followed by nitride etching. Mask design methodology for the various shapes microstructures whose edges aligned along different directions is briefly discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
