Abstract
Creation of memristors is one of the perspective directions of the development of nonvolatile memory in portable devices and neuromorphic systems. In recent years, carbon nanostructures have established themselves as promising materials for creating memristors. This paper presents the results of studies of resistive switching of strained carbon nanotube (CNT) under atmospheric and vacuum conditions. It is shown that the ratio of resistances in high and low resistance states (HRS/LRS) of strained CNTs increases 10 times under a vacuum. This fact makes it possible to exclude the influence of adsorption processes on the switching process of strained CNT. The effect of the upper electrode material (graphite, platinum and tungsten) on the HRS/LRS ratio of memristor structure based on strained CNT has been established. It is shown that tungsten is the most suitable material due to the similar values of the work function a tungsten and a multi-walled CNT. A prototype of a memristor based on strained CNT 35 nm in diameter and 747 nm in length has been made. The repeatable resistive switching of the breadboard over 500 cycles with the ratio HRS/LRS ⁓ 2 · 102 has been shown. The obtained results represent the basis for the creation of memristors based on carbon nanotubes.
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