Memristor BJT pair based low complex circuits for portable electronics

Abstract

Circuits consisting of both memristor and bipolar junction transistor (BJT) were found to be extremely beneficial as the current driven by the transistor enhanced the memristive performances. In this work, memristor-BJT pair was considered and its electronic characteristics were investigated. The pair demonstrated the features of tunable current regulator with reduced circuit complexity. Importantly, the duo exhibited stable characteristics for a large range of frequency variations. Interestingly, the ameliorated linearity was obtained in the memristance-time characteristics. Most importantly, variable negative resistance (VNR) was achieved by modulating the current through the couple. This property was employed in solving linear equations that possess negative slope. In addition, VNR was utilized to implement a low circuit complexity based pulse signal generator with tunable amplitude and on duration. The abovementioned results were obtained through simulation and fabrication routes. The ideas proposed in this work pave the way for futuristic highly reliable oscillators and logic control circuits with reduced on-chip area for portable electronic systems.