Abstract
The current‒voltage characteristics of the metal/nanocomposite (NC)/metal structures based on (Co41Fe39B20) x (LiNbO3)100–x NCs 2.4 and 3 μm thick are investigated in the fields of up to ~104 V/cm. The structures are synthesized via ion-beam sputtering of a composite target, in which NCs of different composition are formed in the single cycle at x = 5‒48 at %. The memristive effect (ME) manifesting itself during resistive switching of structures and the storage of incipient states has been detected at x ≈ 10 at %. It is ascertained that the ME depends weakly on used metal (Cu or Cr) contacts and the NC layer thickness, the number of switching cycles (without degradation) exceeds 105, and the ratio between the resistances of high- and low-resistance states, i.e., the Roff/Ron ratio, reaches approximately 65. The detected ME is explained by the fact that oxygen vacancies substantially affect the tunneling conductance of metal-granule chains determining the electric resistance of structures below the percolation threshold.
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