Abstract
In viscous dynamics, velocity is proportional to the force. An ideal memristor is a device whose resistance changes at a rate proportional to the driving input. We present a proof-of-principle demonstration of the connection between viscous dynamics and memristive functionality by utilizing a thin-film ferromagnet/antiferromagnet bilayer, where viscous magnetization dynamics results from the frustration at the magnetic interface, and driving is provided by an external magnetic field. Thanks to the atomic scale of frustration effects, the presented approach is amenable to downscaling. It can also be adapted for electronic driving by spin torque, making it attractive for applications in neuromorphic circuits.
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