Memristive Devices: Planar and Transparent Memristive Devices Based on Titanium Oxide Coated Silver Nanowire Networks with Tunable Switching Voltage (Small 21/2021)

Abstract

In article number 2007344, Daniel Bellet, David Muñoz-Rojas, and co-workers demonstrate transparent resistive switching devices entirely fabricated by open-air approaches, without a deposition chamber. The threshold voltage can be tuned by adjusting the density of AgNWs, while maintaining a high LRS/HRS ratio. The researchers show the effect of oxide thickness on the threshold-switching phenomenon, thus shedding light on the conduction mechanism of this type of switching devices.