Memory, Memristive, and Neuromorphic Devices Based on Two-dimensional Transition Metal Dichalcogenides

Abstract

This chapter presents a review of recent research activities seeking to implement two-dimensional transition metal dichalcogenides for making memory and memristive devices as well as demonstrating preliminary neuromorphic systems. The first section will discuss the special electronic and morphological properties of transition metal dichalcogenides, which could be investigated and further exploited for realizing memory, memristive, and neuromorphic functions. These attractive characteristics related to layered materials have led to several prototype memory and memristive devices, including multi-bit transistor-based memories, memristive transistors, memristors exhibiting analogue switching characteristics, multi-terminal memristors enabling ionic coupling functions, and neuromorphic light-response devices capable of emulating synaptic and neuronal responses to external simulations. The subsequent sections will review these different types of memory and memristive devices based on transition metal dichalcogenides and present the discussion on their technical advantages and disadvantages as compared to the state-of-the-art counterpart devices as well as the potential features that need further research effort.