Abstract
In this paper, the physical characteristics and memristive behavior of TiO2 nanostructures grown at different substrate positioning by wet chemical solution were investigated. TiO2 thin film as a seed layer for TiO2 nanostructures growth was first deposited on ITO-coated substrate by RF magnetron sputtering method. TiO2 nanostructures were then grown by immersing the TiO2 thin film/ITO/glass sample in 10M NaOH solution at 80 °C while studying the effect of the substrate position to the nanostructure growth and thus its memristive behavior. Characterization on the growth morphology of TiO2 nanostructures was observed using scanning electron microscopy (FESEM). The current-voltage (I-V) measurement of the device was investigated for its memristive behavior. Different growth morphology of TiO2 nanostructures was observed at different substrate positioning. It was found that sample immersed with TiO2 layer facing down the vessel result in the formation of TiO2 nanowires and exhibit better memristive behavior.
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