Abstract
A titanium dioxide (TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) based memristive device was fabricated and investigated for its memristive behavior. In this paper, the effect of annealing duration on the memristive behavior of device was studied. TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin films were deposited on ITO substrate using RF magnetron sputtering method and then annealed in nitrogen at 450°C for 10, 30 and 60min. Characterization of current-voltage (I-V) measurement and surface morphology using scanning electron microscopy (FESEM) between annealed and nonannealed samples were investigated. From the result, it shows that sample annealed at 450°C for 60min resulted in switching loop with high conductivity when negative bias is applied probably due to the presence of high oxygen vacancies.
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