Abstract
Three-dimensional (3D) stackable memory frames, including nano-scaled crossbar arrays, are one of the most reliable building blocks to meet the demand of high-density non-volatile memory electronics. However, their utilization has the disadvantage of introducing issues related to sneak paths, which can negatively impact device performance. We address the enhancement of complementary resistive switching (CRS) features via the incorporation of insulating frames as a generic approach to extend their use; here, a Pt/Ta2O5−x/Ta/Ta2O5−x/Pt frame is chosen as the basic CRS cell. The incorporation of Ta/Ta2O5−x/Ta or Pt/amorphous TaN/Pt insulting frames into the basic CRS cell ensures the appreciably advanced memory features of CRS cells including higher on/off ratios, improved read margins, and increased selectivity without reliability degradation. Experimental observations identified that a suitable insulating frame is crucial for adjusting the abrupt reset events of the switching element, thereby facilitating the enhanced electrical characteristics of CRS cells that are suitable for practical applications.
Highlights
Resistive random access memory (ReRAM) devices are rapidly becoming one of the most reliable candidates for next-generation emerging memories due to their outstanding features, including their ultra-low power consumption, fast operation, and outstanding scaling potential[1,2,3]
The observed bipolar resistive switching behavior can be understood based on the filamentary model; this is caused by the reorganization of oxygen vacancies in the Ta2O5−x layer[9,25,26]
The incorporation of various insulating frames into the basic complementary resistive switching (CRS) structure was systematically examined in an attempt to enhance the oxide-based CRS characteristics
Summary
Resistive random access memory (ReRAM) devices are rapidly becoming one of the most reliable candidates for next-generation emerging memories due to their outstanding features, including their ultra-low power consumption, fast operation, and outstanding scaling potential[1,2,3] To ensure such features, a variety of non-stoichiometric transition metal oxide materials have been employed[4,5]. An associative capacitive network based on CRS, which can be used as a memory-intensive platform with a significant area and energy efficiency, was introduced in the 40 X 41 nano-crossbar array[23] Beyond their use in non-volatile memory applications, CRS devices have recently been used in a variety of devices, such as multi-functional memories[24], neuromorphic computing[17], and fuzzy logic circuits[19]. These experimental findings can be generalized and extended to engineer CRS switching characteristics that are suitable for high-density CRS application in array-level structures
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