Abstract
This article deals with future memory technologies in the next mobile era. First concern is about whether NAND flash memory and DRAM will succeed to evolve beyond 50 nm technologies. Now, technological needs in both memories play a driving engine in pushing further for scaling of a device dimension. Secondly, entirely different types of non-volatile memories can start to penetrate main memory markets as an alternative of NAND flash memory or DRAM in the not-too-distant future. Along with 3-D access transistors, it is widely accepted that 3-D MIM capacitors with ultra high-K dielectrics and noble electrodes will extend silicon technology down to a technology node between 20 to 30 nm. With charge-trap-flash technology, NAND flash memory will extend its technology node down to 20 - 30 nm. Among the candidates for the next generation, PRAM and FRAM begin to burgeon in mass-production. Beyond a 50 nm technology node, scaling of PRAM could be successful by the development of new material and new cell structure. 3-D ferroelectric-capacitor technology is critical for FRAM to enter a 90 nm technology node and beyond.
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