Abstract
The effect of various factors such as temperature, film thickness, and Pb content on the electrical conductivity and switching phenomenon in Se90 Te10−x Pb x films has been examined and is discussed herein. X-ray diffraction analysis and energy-dispersive x-ray spectroscopy were used to confirm the structure and chemical composition of the films, respectively. The variation of the electrical conductivity σ dc with Pb addition was correlated with the nature and strength of the Pb bonds in the SeTe matrix. Current–voltage characteristic curves showed two regions of high and low resistance with negative differential resistances, revealing memory-type switching corresponding to an electrothermal model. The applicability of this model was confirmed using the electrical to switching activation energy ratio, as well as the heat dissipation factor. The mean switching voltage was found to be dependent on temperature, film thickness, and composition. The decrease in the switching voltage with Pb addition is analyzed based on the thermal stability variation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
