Abstract
AbstractIt has been found that thallium selenide single crystals exhibit bistable or memory switching. The specimen under test showed threshold switching with critical field of the switching being ∼ 103 V/cm at room temperature. Memory switching effect measurements were performed with single crystals of p–TlSe. The results strongly indicated that the phenomenon in our sample is very sensitive to temperature, light intensity and sample thickness. Memory state persists if the current is decreased slowly to its zero value. However, if current was forced to decay suddenly, the specimen returned to the high resistance state. The current‐voltage characteristics is symmetrical with respect to the reverse of the applied voltage and current. The switching parameters were checked under the influence of different factors of the ambient condition. An analysis of the results was done.
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