Abstract
An investigation of the switching effect in InTe shows that the switching parameters (Ith, Uth, Pth, Eth, and Roff/Ron) are sensitive to temperature, light intensity, and sample thickness as well. The I-U characteristic is symmetric with respect to the polarity of the applied field. The switching effect observed in such crystals shows memory. A critical field of 103 V/cm is necessary for switching phenomena to appear at room temperature. The threshold field is dependent on the thickness of the active region Ethd−0.77. In Te with such properties can be used in switching devices.
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