Abstract
The memory-like behavior of melanin biopolymer under electrical stimuli is shown through electrical transport characterization performed on melanin based metal insulator semiconductor structures on silicon. The presence of a memory window and retention behavior is verified by capacitance-voltage read outs before and after the application of voltage pulses. Interestingly, these phenomena occur without the presence of metallic nanoclusters enclosed in the melanin matrix. Charge trapping is considered the main mechanism responsible for the melanin memory-like character. The inability to erase the memory window has been ascribed to the permanent polarization effect during the application of the voltage pulse.
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