Abstract
AbstractCurrent‐voltage characteristics of in‐plane gated quantum‐wire transistors with embedded InGaAs quantum dots are studied at low temperatures. Due to the floating gate function of the quantum dots, for small bias voltages a threshold hysteresis of up to 0.9 V is observed between the up sweep and the down sweep of the gate voltage. With increasing bias the threshold hysteresis decreases, is even suppressed for a critical bias voltage and inverts its sign for higher biasing. We associate this bias controlled memory function to a bias voltage dependent gate efficiency of the quantum‐wire transistor. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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