Abstract
Rapid thermal annealing of microcrystalline Si (µc-Si) films induced by cw semiconductor diode laser (SDL) irradiation has been investigated. Owing to the higher absorption coefficient of µc-Si than that of amorphous Si (a-Si), 1.2-µm-thick µc-Si films are melted and recrystallized within 3 ms, whereas no phase transformation of a-Si films is observed under the same annealing condition. The annealed Si films show a high crystalline volume fraction of 97% and [111] preferential orientation. Characteristic triangle surface structures aligned to the laser scanning direction, which suggests that the lateral solidification from molten Si is observed.
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