Abstract
Oxygen distribution in the Czochralski-grown (Cz) silicon single crystal is closely associated with melt convection occurring near the growth interface because oxygen atoms in the melt are transported by fluid motion. Using melt quenching developed utilizing the double-layered (DL) Cz process, we studied oxygen transport phenomena around the growth interface. Micro-Fourier transform infrared spectroscopy (micro-FTIR) measurements showed that the oxygen concentration distribution in the growing crystal was related to melt convections, such as the Cochran flow and fluid motion from the melt surface. This also agrees with characteristic oxygen striation in both the crystal and melt observed using micro-FTIR and Wright etching. We concluded that melt quenching using the DLCz process is effective in directly observing the oxygen concentration distribution in the melt during crystal growth.
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