Abstract
Bulk ingots of polycrystalline Ga 1−xAl xSb solid solutions have been prepared by a vertical Bridgman method. The variations of the alloy composition were studied along and normal to the growth axis, in connection with the imposed temperature gradient. The segregation of germanium and tellurium dopants was measured. The GaSb AlSb phase diagram has been investigated and theoretically calculated using a regular solution model. The electrical properties of the as grown alloys have been determined. n-type Ga 1−xAl xSb alloys were obtained by Te doping as undoped crystals were p-type, with generally a carrier concentration of about 10 17 cm −3. The variations versus T −1 of the Hall coefficient, the resistivity and the mobility are given for some p- and n-type samples.
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