Megahertz frequency characterization of transparent nanowire-based thin-film transistors

Abstract

The megahertz frequency performance of fully transparent thin-film transistors (TFTs) based upon tin oxide (SnO 2 ) nanowires with indium tin-oxide (ITO) contacts and interconnects is presented. Utilizing arrays of the single-crystalline nanowires as the semiconductor channel material and a low-temperature fabrication process, fully transparent TFTs were fabricated on glass substrates. The nanowire TFTs show a current gain cut-off frequency f T of 44 MHz and power gain cut-off frequency f max of 109 MHz. The use of existing and scalable fabrication processes suggest that the nanowire thin-film approach may be promising for high-speed transparent and flexible integrated circuits fabricated on diverse substrates.