Abstract
The use of megaelectronvolt implantations in silicon very-large-scale integration is increasing as the device dimensions are decreasing rapidly toward submicrometer geometries, and the number of components per chip are exceeding 10 6. Several unique advantages are offered by megaelectronvolt implantations in process technology — in particular, the ability to dope and alter the profile deep below the surface, and the dramatic reduction in the thermal processing of very-large-scale integrated circuits. These features have led to several applications in complementary metal-oxide-semi-conductor and bipolar technologies and to their combination to give a merged technology called BICMOS. Despite the obvious advantages of megaelectronvolt implantations, their implementation in process technologies has not been as rapid as was the case for kiloelectronvolt implantations in the 1970s. Factors affecting this are masking, annealing of damage, profiles and modelling, and equipment issues. An up-to-date review of the physics and technologies of the above issues is presented in this paper. Also, conventional as well as some new applications are discussed.
Published Version
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