Abstract

Medium voltage SiC Junction Barrier Schottky (JBS) diodes are considered as a replacement for conventional Si freewheeling PiN diodes in phase-leg applications. While lower voltage SiC Schottky diodes are commercially available, medium voltage SiC JBS diodes are also attractive due to their relative simplicity and thus potential for low cost. In this work, the performance of 4.5 kV SiC JBS diodes paired with Si IGBTs is reviewed and compared to legacy components. Hybrid Si/SiC module design and performance are reviewed and potential reliability issues are examined.

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