Abstract
Focused ion beam prepared silicon calibration specimens with boron doped layers have been examined using off-axis electron holography. By using a state-of-the-art FEI Titan microscope with unprecedented stability, we have been able to record holograms for time periods of 128s with contrast levels of almost 40% and an average signal on the charge coupled device camera of 30 000 counts. A consequence of this is a significant improvement of the signal-to-noise ratio in the phase images allowing steps in potential of less than 0.030±0.003V to be measured if sufficient care is taken during specimen preparation.
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