Abstract
Magnetic sensor with spin valve-GMR technology with medium dynamic range is designed for a diversity of applications, including linear and rotary position measurements, proximity switches, and current sensors. For this, the sensing layer (SL) of the spin valve stack was modified by a soft pinning layer (SPL) through an exchange bias field created by an antiferromagnetic layer which has a lower blocking temperature than the one that is kept adjacent to the pinned layer. Numerical simulation was carried out to control the bias field by keeping a non-magnetic Ru spacer layer between the SPL and SL layers and the results were experimentally verified. The magnetic sensor was fabricated with linear operating field range of the order ±100 Oe having a sensitivity of the order of 0.1 m V Vâ1 Oeâ1 near zero field. The thermal performance confirms that the device can be operated in the temperature range of â40 âC to 125 âC and it has a thermal coefficient of voltage around 15 ”V Vâ1âCâ1.
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